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Infineon IGBT, 53 A 600 V, 3-Pin TO-247, Through Hole
Item no.: [9406968] | Manufacturer: Infineon | Model no.: IGW30N60TPXKSA1 | EAN: 2050009801762
Remote stock (2-3 days)
The item is in a remote warehouse, delivery time is 2-3 business days. More info
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Shipping @price - GLS
12,00
EUR
4,22
Incl. VAT 5,28
Total incl. delivery
20,28
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Infineon TrenchStop IGBT Transistors, 600 and 650V
A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 600 and 650V featuring TrenchStop technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.
Collector-emitter voltage range 600 to 650V
Very low VCEsat
Low turn-off losses
Short tail current
Low EMI
Maximum junction temperature 175°C
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and lowsaturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 600 and 650V featuring TrenchStop technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.
Collector-emitter voltage range 600 to 650V
Very low VCEsat
Low turn-off losses
Short tail current
Low EMI
Maximum junction temperature 175°C
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and lowsaturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.