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Microchip Technology N-Channel MOSFET, 175 mA, 300 V Depletion, 3-Pin TO-92
Item no.: [9413054] | Manufacturer: Microchip Technology | Model no.: DN2530N3-G
Remote stock (14-21 days)
The item is in a remote warehouse, delivery time is 14-21 business days. More info
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Shipping @price - GLS
12,00
EUR
3,57
Incl. VAT 4,46
Total incl. delivery
19,46
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Supertex N-Channel Depletion Mode MOSFET Transistors
The Supertex range of N-channel depletion-mode DMOS FET transistors from Microchip are suited to applications requiring high breakdown voltage, high input impedance, low input capacitance and fast switching speeds.
Features
High input impedance
Low input capacitance
Fast switching speeds
Low on-resistance
Free from secondary breakdown
Low input and output leakage
Typical Applications
Normally-on switches
Solid state relays
Converters
Linear amplifiers
Constant current sources
Power supply circuits
Telecoms
The Microchip DN2530 N-channel depletion mode (normally-on) transistor utilizes an advanced vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. It has Drain-to-source and Drain-to-gate voltage of 300V and static drain-to-source on-state resistance of 25O.
High input impedance
Low input capacitance
Fast switching speeds
Low on-resistance
Free from secondary breakdown
Low input and output leakage
Lead (Pb)-free
3-lead TO-92 package
MOSFET Transistors, Microchip
The Supertex range of N-channel depletion-mode DMOS FET transistors from Microchip are suited to applications requiring high breakdown voltage, high input impedance, low input capacitance and fast switching speeds.
Features
High input impedance
Low input capacitance
Fast switching speeds
Low on-resistance
Free from secondary breakdown
Low input and output leakage
Typical Applications
Normally-on switches
Solid state relays
Converters
Linear amplifiers
Constant current sources
Power supply circuits
Telecoms
The Microchip DN2530 N-channel depletion mode (normally-on) transistor utilizes an advanced vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. It has Drain-to-source and Drain-to-gate voltage of 300V and static drain-to-source on-state resistance of 25O.
High input impedance
Low input capacitance
Fast switching speeds
Low on-resistance
Free from secondary breakdown
Low input and output leakage
Lead (Pb)-free
3-lead TO-92 package
MOSFET Transistors, Microchip